Type: Junction field effect transistor (JFET)
FET type: P-channel
Gate-source cut-off voltage (VGS(off)@ID):800mV@10nA
Gate-source breakdown voltage (V(BR)GSS): 30V
Power (Pd):225mW
Drain-source on-resistance (RDS(on)):300Ω
Saturated drain-source current (Idss@Vds,Vgs=0):1.5mA@15V
Input capacitance (Ciss@Vds):11pF@10V
Working temperature:-55℃~+150℃@(Tj)
