Type: N-channel MOSFET
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 11.5A
On-resistance (RDS(on)): 10mΩ@10V, 11.5A
Power dissipation (Pd): 2.5W
Gate charge (Qg): 22nC@10V
Input capacitance (Ciss@Vds): 1.24nF@15V
Reverse transmission capacitance (Crss): 120pF@15V
Working temperature: -55℃~+150℃
