Type: N-channel MOSFET
Drain-source voltage (Vdss): 40V
Continuous drain current (Id): 30A
On-resistance (RDS(on)): 9.4mΩ@4.5V, 1.8A
Power dissipation (Pd): 27W
Threshold voltage (Vgs(th)): 1.5V
Gate charge (Qg): 14nC@4.5V
Input capacitance (Ciss@Vds): 1.48nF
Reverse transfer capacitance (Crss): 13pF
Working temperature: -55℃~+150℃
