Type: N-channel MOSFET
Drain-source voltage (Vdss):55V
Continuous drain current (Id): 3.1A
On-resistance (RDS(on)): 65mΩ@10V, 3.1A
Dissipated power (Pd): 1W
Threshold voltage (Vgs(th)):2V
Input capacitance (Ciss@Vds):510pF@25V
Working temperature: -55℃~+150℃
