Type: P-channel MOSFET
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 12A
On-resistance (RDS(on)): 24mΩ@10V, 6A
Power dissipation (Pd): 40W
Threshold voltage (Vgs(th)):2.5V
Gate charge (Qg): 12nC
Input capacitance (Ciss@Vds):1.45nF@25V
Reverse transmission capacitance (Crss): 120pF@25V
Working temperature: -55℃~+175℃
