Type: P-channel MOSFET
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 10A
On-resistance (RDS(on)): 160mΩ@10V, 5A
Power dissipation (Pd): 35W
Gate charge (Qg): 6.4nC@10V
Input capacitance (Ciss@Vds): 340pF@48V
Reverse transmission capacitance (Crss): 20pF@48V
Working temperature: -55℃~+175℃
