Type: N-channel MOSFET
Drain-source voltage (Vdss): 100V
Continuous drain voltage (Id): 70A
On-resistance (RDS(on)): 8mΩ@10V, 8A
Dissipated power (Pd): 100W
Threshold voltage (Vgs(th)):4.5V
Gate charge (Qg): 60nC@50V
Input capacitance (Ciss@Vds): 4.03nF@50V
Reverse transmission capacitance (Crss): 58pF@50V
Working temperature: -55℃~+175℃
