Type: N-channel MOSFET
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 140A
On-resistance (RDS(on)): 2.8mΩ@10V, 15A
Power dissipation (Pd): 125W
Threshold voltage (Vgs(th)): 2V
Input capacitance (Ciss@Vds): 3.11nF@25V
Reverse transmission capacitance (Crss): 193pF@25V
Working temperature: -55℃~+175℃
