Type: P-channel-field effect transistor (MOSFET)
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 12A
On-resistance (RDS(on)): 14mΩ
Power dissipation: 2.5W
Gate charge (Qg): 30.7nc@10V
Input capacitance (Ciss@Vds): 1.802nf@15V
Reverse transmission capacitance (Crss): 295pF@15V
Working temperature: -55℃~+150℃
