Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 58A
Power (Pd):3.6W；31.2W
On-resistance (RDS(on)@Vgs,Id):5.1mΩ@10A,10V
Threshold voltage (Vgs(th)@Id):2.2V@250uA
Gate charge (Qg@Vgs):29nC@10V
Input capacitance (Ciss@Vds):1.45nF@15V
Working temperature:-55℃~+150℃
