Product Type: Field Effect Transistor (MOSFET)
Type: 2 N-channel
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 5.3A
Power (Pd): 3.1W
On-resistance (RDS(on)@Vgs,Id):72mΩ@4.5V,3.9A
Threshold voltage (Vgs(th)@Id):3V@250uA
Gate charge (Qg@Vgs):20nC@10V
Input capacitance (Ciss@Vds):665pF@15V
Working temperature:-55℃~+150℃
