Product Type: Field Effect Transistor (MOSFET)
Type: 1 P-channel
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 4.7A
Power (Pd):2.4W；5W
On-resistance (RDS(on)@Vgs,Id):120mΩ@10V,3.2A
Threshold voltage (Vgs(th)@Id):3V@250uA
Gate charge (Qg@Vgs):22nC@10V
Input capacitance (Ciss@Vds):600pF@30V
Working temperature:-55℃~+150℃
