Product Type: Field Effect Transistor (MOSFET)
Type: 1 P-channel
Drain-source voltage (Vdss): 40V
Continuous drain current (Id): 11A
Power (Pd): 1.9W
On-resistance (RDS(on)@Vgs,Id):9.2mΩ@18.6A,10V
Threshold voltage (Vgs(th)@Id):3V@250uA
Gate charge (Qg@Vgs):140nC@10V
Working temperature:-55℃~+150℃
