Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 100V
Continuous drain current (Id): 19.7A
Power (Pd):3.5W；7.8W
On-resistance (RDS(on)@Vgs,Id):10mΩ@15A,10V
Threshold voltage (Vgs(th)@Id):3.3V@250uA
Gate charge (Qg@Vgs):69nC@10V
Input capacitance (Ciss@Vds):2.41nF@50V
Working temperature:-55℃~+150℃
