Product Type: Field Effect Transistor (MOSFET)
Type: 1 P-channel
Drain-source voltage (Vdss): 50V
Continuous drain current (Id): 180mA
Power (Pd): 310mW
On-resistance (RDS(on)@Vgs,Id):10Ω@5V,100mA
Threshold voltage (Vgs(th)@Id):2V@1mA
Input capacitance (Ciss@Vds):24.6pF@25V
Working temperature:-55℃~+150℃
