Product Type: Field Effect Transistor (MOSFET)
Type: 1 P-channel
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 530mA
Power (Pd): 450mW
On-resistance (RDS(on)@Vgs,Id):1Ω@400mA,4.5V
Threshold voltage (Vgs(th)@Id):1.1V@250uA
Gate charge (Qg@Vgs):900pC@4.5V
Input capacitance (Ciss@Vds):76pF@15V
Working temperature:-55℃~+150℃
