Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 100V
Continuous drain current (Id): 42A
Power (Pd): 140W
On-resistance (RDS(on)@Vgs,Id):14mΩ@10V,38A
Threshold voltage (Vgs(th)@Id):2.5V@100uA
Gate charge (Qg@Vgs):48nC@4.5V
Input capacitance (Ciss@Vds):3.98nF@25V
Working temperature:-55℃~+175℃
