Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 90A
Power (Pd): 140W
On-resistance (RDS(on)@Vgs,Id):4.8mΩ@66A,10V
Threshold voltage (Vgs(th)@Id):3.7V@100uA
Gate charge (Qg@Vgs):130nC@10V
Input capacitance (Ciss@Vds):4.36nF@25V
Working temperature:-55℃~+175℃
