Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 40V
Continuous drain current (Id): 56A
Power (Pd): 98W
On-resistance (RDS(on)@Vgs,Id):3.9mΩ@10V,56A
Threshold voltage (Vgs(th)@Id):3.9V@100uA
Gate charge (Qg@Vgs):130nC@10V
Input capacitance (Ciss@Vds):3.15nF@25V
Working temperature:-55℃~+175℃
