Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 150V
Continuous drain current (Id): 33A
Power (Pd): 144W
On-resistance (RDS(on)@Vgs,Id):42mΩ@10V,21A
Threshold voltage (Vgs(th)@Id):5V@100uA
Gate charge (Qg@Vgs):26nC@10V
Input capacitance (Ciss@Vds):1.75nF@50V
Working temperature:-55℃~+175℃
