Product Type: Field Effect Transistor (MOSFET)
Type: 1 N-channel
Drain-source voltage (Vdss): 55V
Continuous drain current (Id): 30A
Power (Pd): 48W
On-resistance (RDS(on)@Vgs,Id):24.5mΩ@18A,10V
Threshold voltage (Vgs(th)@Id):4V@250uA
Gate charge (Qg@Vgs):27nC@10V
Input capacitance (Ciss@Vds):740pF@25V
Working temperature:-55℃~+175℃
