Product Type: Field Effect Transistor (MOSFET)
Type: 1 N channel + 1 P channel
Drain-source voltage (Vdss): 25V
Continuous drain current (Id): 3.5A; 2.3A
Power (Pd): 2W
On-resistance (RDS(on)@Vgs,Id):100mΩ@1A,10V
Threshold voltage (Vgs(th)@Id):3V@250uA
Gate charge (Qg@Vgs):27nC@10V
Input capacitance (Ciss@Vds):330pF@15V
Working temperature:-55℃~+150℃
