Product Type: Field Effect Transistor (MOSFET)
Type: 1 P-channel
Drain-source voltage (Vdss):40V
Continuous drain current (Id): 10.5A
Power (Pd): 2.5W
On-resistance (RDS(on)@Vgs,Id):15mΩ@10V,10.5A
Threshold voltage (Vgs(th)@Id):3V@250uA
Gate charge (Qg@Vgs):110nC@10V
Input capacitance (Ciss@Vds):9.25nF@25V
Working temperature:-55℃~+150℃
