Product Type: Field Effect Transistor (MOSFET)
Type: 1 P-channel
Drain-source voltage (Vdss): 40V
Continuous drain current (Id): 6.2A
Power (Pd): 2.5W
On-resistance (RDS(on)@Vgs,Id):41mΩ@10V,6.2A
Threshold voltage (Vgs(th)@Id):3V@250uA
Gate charge (Qg@Vgs):80nC@10V
Input capacitance (Ciss@Vds):3.22nF@25V
Working temperature:-55℃~+150℃
