Product Type: Field Effect Transistor (MOSFET)
Type: 2 N-channel
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 6.5A
Power (Pd): 2W
On-resistance (RDS(on)@Vgs,Id):29mΩ@10V,5.8A
Threshold voltage (Vgs(th)@Id):1V@250uA
Gate charge (Qg@Vgs):33nC@10V
Input capacitance (Ciss@Vds):650pF@25V
Working temperature:-55℃~+150℃
