Product Type: Field Effect Transistor (MOSFET)
Type: 2 N-channel
Drain-source voltage (Vdss): 80V
Continuous drain current (Id): 3.6A
Power (Pd):2W
On-resistance (RDS(on)@Vgs,Id):73mΩ@10V,2.2A
Threshold voltage (Vgs(th)@Id):4V@250uA
Gate charge (Qg@Vgs):23nC@10V
Input capacitance (Ciss@Vds)：660pF@25V
Working temperature:-55℃~+150℃
