Product Type: Field Effect Transistor (MOSFET)
Type: 2 P-channel
Drain-source voltage (Vdss):30V
Continuous drain current (Id): 4.9A
Continuous drain current (Id): 2W
On-resistance (RDS(on)@Vgs,Id):58mΩ@10V,4.9A
Threshold voltage (Vgs(th)@Id):1V@250uA
Gate charge (Qg@Vgs):34nC@10V
Input capacitance (Ciss@Vds):710pF@25V
Working temperature:-55℃~+150℃@(Tj)
