Product Type: Field Effect Transistor (MOSFET)
Type: 1 N channel + 1 P channel
Drain-source voltage (Vdss): 20V
Continuous drain current (Id):6.6A；5.3A
Power (Pd): 2W
On-resistance (RDS(on)@Vgs,Id):29mΩ@6A,4.5V
Threshold voltage (Vgs(th)@Id):700mV@250uA
Gate charge (Qg@Vgs):27nC@4.5V
Working temperature:-55℃~+150℃
