Type: Junction field effect transistor (JFET)
FET type: N-channel
Gate-source cut-off voltage (VGS(off)@ID):300mV@10nA
Gate-source breakdown voltage (V(BR)GSS): 40V
Power (Pd):350mW
Saturated drain-source current (Idss@Vds,Vgs=0):200uA@20V
Working temperature:-55℃~+150℃@(Tj)
