Type: Junction field effect transistor (JFET)
FET type: N-channel
Gate-source cut-off voltage (VGS(off)@ID):4V@10nA
Gate-source breakdown voltage (V(BR)GSS):25V
Power (Pd):460mW
Drain-source on-resistance (RDS(on)):18h
Saturated drain-source current (Idss@Vds,Vgs=0):10mA@15V
