Type: Junction field effect transistor (JFET)
FET type: N-channel
Gate-source cut-off voltage (VGS(off)@ID):3V@1uA
Gate-source breakdown voltage (V(BR)GSS):35V
Power (Pd):350mW
Drain-source on-resistance (RDS(on)): 30Ω
Saturated drain-source current (Idss@Vds,Vgs=0):20mA@15V
Working temperature:-55℃~+150℃@(Tj)
